High Ruggedness IGBT Power Transistor IKW25N120T2 K25T1202 1200V 25A

Product Categories

Shenzhen Retechip Electronics Co., Ltd

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

Shenzhen Retechip Electronics Co., Ltd

Visit Website

City: Shenzhen

Province/State: Guangdong

Country/Region: China

View Contact Details

High Ruggedness IGBT Power Transistor IKW25N120T2 K25T1202 1200V 25A

Contact Now

High Ruggedness IGBT Power Transistor IKW25N120T2 K25T1202 1200V 25A

IKW25N120T2,1200 V, 25 A IGBT discrete with anti-parallel diode in TO-247 package Insulated Gate Bipolar Transistor IKW25N120T2 K25T1202 1200V 25A Igbt Transistors Description 1200 V, 25 A IGBT ...

Product Tags:

High Ruggedness IGBT Power Transistor

IGBT Power Transistor IKW25N120T2

K25T1202 IGBT Transistors

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Shenzhen Retechip Electronics Co., Ltd
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!