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High Ruggedness IGBT Power Transistor IKW25N120T2 K25T1202 1200V 25A

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High Ruggedness IGBT Power Transistor IKW25N120T2 K25T1202 1200V 25A

Brand Name : Infineon

Model Number : IKW25N120T2

Place of Origin : Original Factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, MoneyGram, PayPay

Supply Ability : 20000pcs Per Month

Delivery Time : 3-5work days

Packaging Details : 240Pcs

Type : IGBT Transistor

Description : IGBT Transistors LOW LOSS DuoPack 1200V 25A

Shipping by : DHL\UPS\Fedex

Lead time : 2-3Working days

Power - Max : 349 W

Mounting Style : Through Hole

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IKW25N120T2,1200 V, 25 A IGBT discrete with anti-parallel diode in TO-247 package

Insulated Gate Bipolar Transistor IKW25N120T2 K25T1202 1200V 25A Igbt Transistors

Description

1200 V, 25 A IGBT discrete with anti-parallel diode in TO-247 package

Infineon 1200V Gen8 IGBTs feature trench gate field stop technology delivered in industry standard

TO-247 packages to provide best-in-class performance for industrial and energy-saving applications.

The Gen8 technology offers softer turn-off characteristics ideal for motor drive applications, minimizing

dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. Infineon 1200V Gen8

IGBTs have current ratings from 8A up to 60A with typical VCE(ON) of 1.7V, and a short-circuit rating

of 10µs to reduce power dissipation, resulting in increased power density and robustness. Using thin

wafer technology, 1200V Gen8 IGBTs deliver improved thermal resistance and maximum junction

temperature up to +175°C.

High Ruggedness IGBT Power Transistor IKW25N120T2 K25T1202 1200V 25A

Features

Lowest VCEsat drop for lower conduction losses

Low switching losses

Easy parallel switching capability due to positive temperature coefficient in VCEsat

Very soft, fast recovery anti-parallel Emitter Controlled diode

High ruggedness, temperature stable behavior

Low EMI emissions

Low gate charge

Very tight parameter distribution

High Ruggedness IGBT Power Transistor IKW25N120T2 K25T1202 1200V 25A

Applications

Home appliances

Motor control and drives

Uninterruptible Power Supplies (UPS)

  • Specifications
  • Product Attribute Attribute Value
    Product Category: IGBT Transistors
    Si
    TO-247-3
    Through Hole
    Single
    1.2 kV
    1.7 V
    - 20 V, + 20 V
    50 A
    349 W
    - 40 C
    + 175 C
    Trenchstop IGBT4
    Tube
    Gate-Emitter Leakage Current: 200 nA
    Height: 20.95 mm
    Length: 15.9 mm
    Product Type: IGBT Transistors
  • Shopping Guide
Shipping Delivery period


For in-stock parts, orders are estimated to ship out in 3 days.
Once shipped, estimated delivery time depends on the below carriers you chose:
DHL Express, 3-7 business days.
DHL eCommerce,12-22 business days.
FedEx International Priority, 3-7 business days
EMS, 10-15 business days.
Registered Air Mail, 15-30 business days.
Shipping rates

After confirming the order, we will evaluate the shipping cost based on the weight of the goods
Shipping option

We provide DHL, FedEx, EMS, SF Express, and Registered Air Mail international shipping.
Shipping tracking

We will notify you by email with tracking number once order is shipped.

Returning
warranty

 Returning

Returns are normally accepted when completed within 30 days from date of shipment.Parts should be unused and in original packaging.Customer has to take charge for the shipping.
Warranty

All Retechip purchases come with a 30-day money-back return policy, This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation
Ordering


Payment


T/T,PayPal, Credit Card includes Visa, Master, American Express.



Product Tags:

High Ruggedness IGBT Power Transistor

      

IGBT Power Transistor IKW25N120T2

      

K25T1202 IGBT Transistors

      
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